NXP USA Inc. PBRN113ES,126
- PBRN113ES,126
- NXP USA Inc.
- TRANS PREBIAS NPN 0.7W TO92-3
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- PBRN113ES,126 Datasheet
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Tape & Box (TB)
- Lead free / RoHS Compliant
- 4472
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PBRN113ES,126 |
Category Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer NXP USA Inc. |
Description TRANS PREBIAS NPN 0.7W TO92-3 |
Package Tape & Box (TB) |
Series - |
Mounting Type Through Hole |
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package TO-92-3 |
Power - Max 700 mW |
Transistor Type NPN - Pre-Biased |
Current - Collector (Ic) (Max) 800 mA |
Voltage - Collector Emitter Breakdown (Max) 40 V |
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max) 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 300mA, 5V |
Frequency - Transition - |
Resistor - Base (R1) 1 kOhms |
Resistor - Emitter Base (R2) 1 kOhms |
Package_case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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