PDTA114EMB,315

NXP Semiconductors(恩智浦半导体) PDTA114EMB,315

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  • PDTA114EMB,315
  • NXP Semiconductors(恩智浦半导体)
  • NOW NEXPERIA PDTA114 - SMALL SIG
  • Transistors - Bipolar (BJT) - Single, Pre-Biased
  • PDTA114EMB,315 Datasheet
  • 3-XFDFN
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 9322
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PDTA114EMB,315
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
NXP Semiconductors(恩智浦半导体)
Description
NOW NEXPERIA PDTA114 - SMALL SIG
Package
Bulk
Series
-
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Supplier Device Package
DFN1006B-3
Power - Max
250 mW
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Frequency - Transition
180 MHz
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
Package_case
3-XFDFN

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