NXP USA Inc. PDTA114ES,126
- PDTA114ES,126
- NXP USA Inc.
- TRANS PREBIAS PNP 500MW TO92-3
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- PDTA114ES,126 Datasheet
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Tape & Box (TB)
- Lead free / RoHS Compliant
- 2025
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PDTA114ES,126 |
Category Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer NXP USA Inc. |
Description TRANS PREBIAS PNP 500MW TO92-3 |
Package Tape & Box (TB) |
Series - |
Mounting Type Through Hole |
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package TO-92-3 |
Power - Max 500 mW |
Transistor Type PNP - Pre-Biased |
Current - Collector (Ic) (Max) 100 mA |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V |
Frequency - Transition - |
Resistor - Base (R1) 10 kOhms |
Resistor - Emitter Base (R2) 10 kOhms |
Package_case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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