PDTB143EQA147

NXP USA Inc. PDTB143EQA147

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  • PDTB143EQA147
  • NXP USA Inc.
  • PDTB143EQA SMALL SIGNAL FET
  • Transistors - Bipolar (BJT) - Single, Pre-Biased
  • PDTB143EQA147 Datasheet
  • 3-XDFN Exposed Pad
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4604
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PDTB143EQA147
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
NXP USA Inc.
Description
PDTB143EQA SMALL SIGNAL FET
Package
Bulk
Series
PDTB143
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Power - Max
325 mW
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Frequency - Transition
150 MHz
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
Package_case
3-XDFN Exposed Pad

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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