NXP USA Inc. PDTB143EQA147
- PDTB143EQA147
- NXP USA Inc.
- PDTB143EQA SMALL SIGNAL FET
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- PDTB143EQA147 Datasheet
- 3-XDFN Exposed Pad
- Bulk
-
Lead free / RoHS Compliant
- 4604
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PDTB143EQA147 |
Category Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer NXP USA Inc. |
Description PDTB143EQA SMALL SIGNAL FET |
Package Bulk |
Series PDTB143 |
Mounting Type Surface Mount |
Package / Case 3-XDFN Exposed Pad |
Supplier Device Package DFN1010D-3 |
Power - Max 325 mW |
Transistor Type PNP - Pre-Biased |
Current - Collector (Ic) (Max) 500 mA |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V |
Frequency - Transition 150 MHz |
Resistor - Base (R1) 4.7 kOhms |
Resistor - Emitter Base (R2) 4.7 kOhms |
Package_case 3-XDFN Exposed Pad |
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