PDTD113ES,126

NXP USA Inc. PDTD113ES,126

The picture is for reference only, please refer to the product specification

  • PDTD113ES,126
  • NXP USA Inc.
  • TRANS PREBIAS NPN 500MW TO92-3
  • Transistors - Bipolar (BJT) - Single, Pre-Biased
  • PDTD113ES,126 Datasheet
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Tape & Box (TB)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 28027
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PDTD113ES,126
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
NXP USA Inc.
Description
TRANS PREBIAS NPN 500MW TO92-3
Package
Tape & Box (TB)
Series
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Power - Max
500 mW
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
33 @ 50mA, 5V
Frequency - Transition
-
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
Package_case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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