PHD3055E,118

NXP USA Inc. PHD3055E,118

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  • PHD3055E,118
  • NXP USA Inc.
  • MOSFET N-CH 60V 10.3A DPAK
  • Transistors - FETs, MOSFETs - Single
  • PHD3055E,118 Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4506
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PHD3055E,118
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 60V 10.3A DPAK
Package
Tape & Reel (TR)
Series
TrenchMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
33W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Rds On (Max) @ Id, Vgs
150mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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