NXP USA Inc. PHT6N06LT,135
- PHT6N06LT,135
- NXP USA Inc.
- MOSFET N-CH 55V 2.5A SOT223
- Transistors - FETs, MOSFETs - Single
- PHT6N06LT,135 Datasheet
- TO-261-4, TO-261AA
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 29308
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PHT6N06LT,135 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 55V 2.5A SOT223 |
Package Cut Tape (CT) |
Series TrenchMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-261-4, TO-261AA |
Supplier Device Package SC-73 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.8W (Ta), 8.3W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 55 V |
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) |
Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 5V |
Vgs(th) (Max) @ Id 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V |
Vgs (Max) ±13V |
Drive Voltage (Max Rds On, Min Rds On) 5V |
Package_case TO-261-4, TO-261AA |
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