PHX18NQ11T,127

NXP USA Inc. PHX18NQ11T,127

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  • PHX18NQ11T,127
  • NXP USA Inc.
  • MOSFET N-CH 110V 12.5A TO220F
  • Transistors - FETs, MOSFETs - Single
  • PHX18NQ11T,127 Datasheet
  • TO-220-3 Full Pack, Isolated Tab
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 23725
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PHX18NQ11T,127
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 110V 12.5A TO220F
Package
Tube
Series
TrenchMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Supplier Device Package
TO-220F
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
31.2W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
110 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Rds On (Max) @ Id, Vgs
90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
635 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack, Isolated Tab

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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