NXP USA Inc. PMDPB56XN,115
- PMDPB56XN,115
- NXP USA Inc.
- MOSFET 2N-CH 30V 3.1A HUSON6
- Transistors - FETs, MOSFETs - Arrays
- PMDPB56XN,115 Datasheet
- 6-UDFN Exposed Pad
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 4834
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PMDPB56XN,115 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer NXP USA Inc. |
Description MOSFET 2N-CH 30V 3.1A HUSON6 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-UDFN Exposed Pad |
Supplier Device Package 6-HUSON (2x2) |
Power - Max 510mW |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 3.1A |
Rds On (Max) @ Id, Vgs 73mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 15V |
Package_case 6-UDFN Exposed Pad |
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