NXP USA Inc. PMT200EN,115
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- PMT200EN,115
- NXP USA Inc.
- MOSFET N-CH 100V 1.8A SOT223
- Transistors - FETs, MOSFETs - Single
- PMT200EN,115 Datasheet
- TO-261-4, TO-261AA
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 22216
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number PMT200EN,115 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer NXP USA Inc. |
| Description MOSFET N-CH 100V 1.8A SOT223 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-261-4, TO-261AA |
| Supplier Device Package SC-73 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 800mW (Ta), 8.3W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs 235mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 475 pF @ 80 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-261-4, TO-261AA |
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