NXP USA Inc. PMT29EN,135
- PMT29EN,135
- NXP USA Inc.
- MOSFET N-CH 30V 6A SOT223
- Transistors - FETs, MOSFETs - Single
- PMT29EN,135 Datasheet
- TO-261-4, TO-261AA
- Bulk
-
Lead free / RoHS Compliant
- 3784
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PMT29EN,135 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 30V 6A SOT223 |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-261-4, TO-261AA |
Supplier Device Package SC-73 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 820mW (Ta), 8.33W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 6A (Ta) |
Rds On (Max) @ Id, Vgs 29mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 492 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-261-4, TO-261AA |
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