NXP USA Inc. PMT760EN,115
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- PMT760EN,115
- NXP USA Inc.
- MOSFET N-CH 100V 900MA SOT223
- Transistors - FETs, MOSFETs - Single
- PMT760EN,115 Datasheet
- TO-261-4, TO-261AA
- Bulk
-
Lead free / RoHS Compliant - 897
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number PMT760EN,115 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer NXP USA Inc. |
| Description MOSFET N-CH 100V 900MA SOT223 |
| Package Bulk |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-261-4, TO-261AA |
| Supplier Device Package SC-73 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 800mW (Ta), 6.2W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 900mA (Ta) |
| Rds On (Max) @ Id, Vgs 950mOhm @ 800mA, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 80 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-261-4, TO-261AA |
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