PMV30UN,215

NXP USA Inc. PMV30UN,215

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  • PMV30UN,215
  • NXP USA Inc.
  • MOSFET N-CH 20V 5.7A TO236AB
  • Transistors - FETs, MOSFETs - Single
  • PMV30UN,215 Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 705
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PMV30UN,215
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 20V 5.7A TO236AB
Package
Tube
Series
TrenchMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23 (TO-236AB)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.9W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Rds On (Max) @ Id, Vgs
36mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 20 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package_case
TO-236-3, SC-59, SOT-23-3

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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