NXP USA Inc. PMV30UN,215
- PMV30UN,215
- NXP USA Inc.
- MOSFET N-CH 20V 5.7A TO236AB
- Transistors - FETs, MOSFETs - Single
- PMV30UN,215 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Tube
-
Lead free / RoHS Compliant
- 705
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PMV30UN,215 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 20V 5.7A TO236AB |
Package Tube |
Series TrenchMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23 (TO-236AB) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.9W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) |
Rds On (Max) @ Id, Vgs 36mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 20 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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