Nexperia USA Inc. PMXB350UPE
- PMXB350UPE
- Nexperia USA Inc.
- MOSFET P-CH 20V 1.2A 3DFN
- Transistors - FETs, MOSFETs - Single
- PMXB350UPE Datasheet
- 3-XDFN Exposed Pad
- 3-XDFN Exposed Pad
- Lead free / RoHS Compliant
- 4721
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PMXB350UPE |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Nexperia USA Inc. |
Description MOSFET P-CH 20V 1.2A 3DFN |
Package 3-XDFN Exposed Pad |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-XDFN Exposed Pad |
Supplier Device Package DFN1010D-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 360mW (Ta), 5.68W (Tc) |
FET Type P-Channel |
Drain to Source Voltage (Vdss) 20V |
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) |
Rds On (Max) @ Id, Vgs 447 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 116pF @ 10V |
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V |
Vgs (Max) ±8V |
Package_case 3-XDFN Exposed Pad |
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