PMXB350UPE

Nexperia USA Inc. PMXB350UPE

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  • PMXB350UPE
  • Nexperia USA Inc.
  • MOSFET P-CH 20V 1.2A 3DFN
  • Transistors - FETs, MOSFETs - Single
  • PMXB350UPE Datasheet
  • 3-XDFN Exposed Pad
  • 3-XDFN Exposed Pad
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4721
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PMXB350UPE
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Nexperia USA Inc.
Description
MOSFET P-CH 20V 1.2A 3DFN
Package
3-XDFN Exposed Pad
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
360mW (Ta), 5.68W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)
Rds On (Max) @ Id, Vgs
447 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
116pF @ 10V
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Vgs (Max)
±8V
Package_case
3-XDFN Exposed Pad

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