PMXB350UPEZ

Nexperia USA Inc. PMXB350UPEZ

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  • PMXB350UPEZ
  • Nexperia USA Inc.
  • MOSFET P-CH 20V 1.2A DFN1010D-3
  • Transistors - FETs, MOSFETs - Single
  • PMXB350UPEZ Datasheet
  • 3-XDFN Exposed Pad
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4304
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PMXB350UPEZ
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Nexperia USA Inc.
Description
MOSFET P-CH 20V 1.2A DFN1010D-3
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
360mW (Ta), 5.68W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)
Rds On (Max) @ Id, Vgs
447mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
116 pF @ 10 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Package_case
3-XDFN Exposed Pad

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