PSMN165-200K,518

Nexperia USA Inc. PSMN165-200K,518

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  • PSMN165-200K,518
  • Nexperia USA Inc.
  • MOSFET N-CH 200V 2.9A 8SO
  • Transistors - FETs, MOSFETs - Single
  • PSMN165-200K,518 Datasheet
  • 8-SOIC (0.154\", 3.90mm Width)
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1026
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PSMN165-200K,518
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Nexperia USA Inc.
Description
MOSFET N-CH 200V 2.9A 8SO
Package
Bulk
Series
TrenchMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SO
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.5W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Tc)
Rds On (Max) @ Id, Vgs
165mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1330 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
8-SOIC (0.154\", 3.90mm Width)

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