PSMN1R4-40YLD,115 Product Introduction:
NXP USA Inc. Part Number PSMN1R4-40YLD,115(Transistors - Bipolar (BJT) - Single), developed and manufactured by NXP USA Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
PSMN1R4-40YLD,115 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the PSMN1R4-40YLD,115 from NXP USA Inc., a cutting-edge power MOSFET designed to deliver exceptional performance and reliability. This advanced semiconductor device is specifically engineered to meet the demanding requirements of various applications, making it an ideal choice for a wide range of industries.
The PSMN1R4-40YLD,115 boasts a low on-resistance, enabling efficient power management and minimizing power losses. With a maximum drain-source voltage of 40V, this MOSFET offers excellent voltage handling capabilities, ensuring reliable operation even in high-voltage applications. Additionally, its high current rating of 160A allows for robust power handling, making it suitable for demanding power conversion applications.
This power MOSFET is designed with a compact and lightweight package, allowing for easy integration into space-constrained designs. Its low thermal resistance ensures efficient heat dissipation, enabling reliable performance even in high-temperature environments. Furthermore, the PSMN1R4-40YLD,115 features a low gate charge, facilitating fast switching speeds and reducing power losses.
The PSMN1R4-40YLD,115 finds its application in a wide range of fields, including automotive, industrial, and consumer electronics. It is particularly well-suited for use in power supplies, motor control systems, battery management systems, and LED lighting applications. With its exceptional performance and versatility, the PSMN1R4-40YLD,115 is the perfect choice for engineers and designers seeking a reliable and efficient power MOSFET solution.
Bipolar (BJT) -Single refers to a single Bipolar Junction Transistor (BJT), which is a commonly used semiconductor device with two PN junctions, usually composed of an NPN or PNP structure. The BJT is capable of amplifying the current and regulating the current between the collector and emitter by controlling the base current. A single BJT is the basic building block of many electronic circuits and can be used for a variety of functions such as amplification, switching, and signal processing.
Application
Bipolar - Single as the main function of the amplifier and switching element. In amplifier applications, BJTS are capable of amplifying the current of the input signal to drive a larger load. In switching applications, the BJT can be used as a high-speed switch to turn the current path between the collector and the emitter on or off by controlling the base current. In addition, BJT can also be used to build oscillators, mixers and other circuits.
A1015 Transistor Pinout, Equivalent & Datasheet
The A1015 transistor stands out due to its impressive features. It's designed to operate at low voltages, making it ideal for applications where power efficiency is crucial. The A1015 can handle a collector current of up to 150mA, which is suitable for small signal amplification.
L7805CV Transistor: Pinout, Datasheet and Applications
What is the L7805CV Transistor? The ST model L7805CV is a voltage regulator in a three-end regulator TO-220 package that can be used in a wide range of applications. It ensures a steady 5V output from a higher input voltage. If sufficient heat dissipation is provided, the L1981301772 can provide an output current of more than 1A. Although these devices are primarily designed as fixed voltage regulators, they can be used with external components to obtain adjustable voltages and currents.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).