PSMN3R8-30LL,115

NXP USA Inc. PSMN3R8-30LL,115

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  • PSMN3R8-30LL,115
  • NXP USA Inc.
  • MOSFET N-CH 30V 40A 8DFN
  • Transistors - FETs, MOSFETs - Single
  • PSMN3R8-30LL,115 Datasheet
  • 8-VDFN Exposed Pad
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25426
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PSMN3R8-30LL,115
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 30V 40A 8DFN
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-DFN3333 (3.3x3.3)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
69W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2085 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
8-VDFN Exposed Pad

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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