NXP USA Inc. PSMN9R0-30YL,115
- PSMN9R0-30YL,115
- NXP USA Inc.
- MOSFET N-CH 30V 61A LFPAK56
- Transistors - FETs, MOSFETs - Single
- PSMN9R0-30YL,115 Datasheet
- SC-100, SOT-669
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 14559
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PSMN9R0-30YL,115 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 30V 61A LFPAK56 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case SC-100, SOT-669 |
Supplier Device Package LFPAK56, Power-SO8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 46W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 61A (Tc) |
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 17.8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1006 pF @ 12 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case SC-100, SOT-669 |
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