PSMN9R0-30YL,115

NXP USA Inc. PSMN9R0-30YL,115

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  • PSMN9R0-30YL,115
  • NXP USA Inc.
  • MOSFET N-CH 30V 61A LFPAK56
  • Transistors - FETs, MOSFETs - Single
  • PSMN9R0-30YL,115 Datasheet
  • SC-100, SOT-669
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 14559
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PSMN9R0-30YL,115
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 30V 61A LFPAK56
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Supplier Device Package
LFPAK56, Power-SO8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
46W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Rds On (Max) @ Id, Vgs
8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1006 pF @ 12 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
SC-100, SOT-669

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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