PTFB213004FV2R250XTMA1 Product Introduction:
Infineon Technologies Part Number PTFB213004FV2R250XTMA1(Transistors - FETs, MOSFETs - RF), developed and manufactured by Infineon Technologies, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
PTFB213004FV2R250XTMA1 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the Infineon Technologies PTFB213004FV2R250XTMA1, a cutting-edge power module designed to revolutionize the field of power electronics. This innovative product combines advanced technology with exceptional performance, making it the ideal choice for a wide range of applications.
One of the standout features of the PTFB213004FV2R250XTMA1 is its compact size, which allows for easy integration into various systems. Despite its small form factor, this power module boasts an impressive power rating of 250A, ensuring reliable and efficient operation even in demanding conditions.
The PTFB213004FV2R250XTMA1 also offers exceptional thermal management capabilities, thanks to its low thermal resistance and high thermal conductivity. This ensures optimal heat dissipation, preventing overheating and extending the lifespan of the module.
With its high voltage rating of 1200V, the PTFB213004FV2R250XTMA1 is suitable for a wide range of applications, including industrial drives, renewable energy systems, and electric vehicles. Its robust design and excellent electrical performance make it an ideal choice for demanding environments where reliability is crucial.
In addition, the PTFB213004FV2R250XTMA1 features advanced protection mechanisms, such as short-circuit protection and over-temperature protection, ensuring safe and reliable operation at all times.
Overall, the Infineon Technologies PTFB213004FV2R250XTMA1 power module offers a winning combination of compact size, high power rating, excellent thermal management, and advanced protection features. It is the perfect solution for various applications in the field of power electronics, providing unmatched performance and reliability.
FET, Mosfet-rf (FETs, MOSFETs-RF) refers to the use of Field-Effect Transistor, FET and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) are RF circuits designed to process high-frequency signals. This class of transistors is specially designed to have low parasitic effects and high gain characteristics, allowing them to provide excellent performance in RF applications. Fets and MOSFET-RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.
Application
FET, MOSFET-RF (FETs, MOSFETs-RF) is widely used in the field of radio frequency, covering wireless communication, radar detection, satellite communication and other key fields. In the wireless communication system, FET and MOSFET as the core components of the RF front end, responsible for signal transceiver, amplification and modulation and demodulation, is the key to mobile phones, base stations, radio stations and other devices to achieve wireless communication functions. In the field of radar detection, they are used to build high-performance RF transceiver systems to improve the detection range and resolution of radar. At the same time, in space applications such as satellite communication and remote sensing, FET and MOSFET also play an important role in providing stable and reliable radio frequency support for satellite communication systems.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
What is MOSFET and its working principle and application
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is an electronic device that controls current by forming a metal oxide layer as a dielectric on a semiconductor. The working principle of MOSFET is based on the control of semiconductor conductivity by electric field.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).