RF1S9640

Harris Corporation RF1S9640

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  • RF1S9640
  • Harris Corporation
  • MOSFET P-CH 200V 11A TO220AB
  • Transistors - FETs, MOSFETs - Single
  • RF1S9640 Datasheet
  • TO-220-3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4815
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RF1S9640
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Harris Corporation
Description
MOSFET P-CH 200V 11A TO220AB
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
125W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Rds On (Max) @ Id, Vgs
500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-220-3

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