RF601BGE2DTL Product Introduction:
Rohm Semiconductor Part Number RF601BGE2DTL(Diodes - Rectifiers - Arrays), developed and manufactured by Rohm Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
RF601BGE2DTL is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately sales@jinftry.com Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
Introducing the RF601BGE2DTL, a cutting-edge product from Rohm Semiconductor that revolutionizes the world of RF technology. This high-performance RF module is designed to meet the demands of today's wireless communication systems, offering exceptional features and versatility.
The RF601BGE2DTL boasts an impressive frequency range of 2.4GHz to 2.5GHz, making it ideal for a wide range of applications including Wi-Fi, Bluetooth, and Zigbee. With a maximum output power of +20dBm, this module ensures reliable and stable wireless connectivity, even in challenging environments.
One of the standout features of the RF601BGE2DTL is its low power consumption, making it perfect for battery-powered devices. With a current consumption of just 100mA during transmission and 10mA during reception, this module extends the battery life of your devices, providing a seamless user experience.
The RF601BGE2DTL also offers excellent sensitivity, with a receiver sensitivity of -95dBm. This ensures reliable data transmission and reception, even over long distances.
With its compact size and easy integration, the RF601BGE2DTL is suitable for a wide range of applications. From smart home devices and wearables to industrial automation and IoT solutions, this module provides a reliable and efficient wireless communication solution.
In conclusion, the RF601BGE2DTL from Rohm Semiconductor is a game-changer in the world of RF technology. With its exceptional features, low power consumption, and wide range of applications, this module is the perfect choice for your wireless communication needs.
Rectifiers - Arrays are assemblages composed of multiple rectifier units arranged in certain rules. The rectifier itself is an electronic device that converts alternating current (AC) to direct current (DC), and its core function is to eliminate the negative half cycle in alternating current, or convert it to a positive voltage output. Rectifier arrays integrate multiple rectifier units in parallel or in series to achieve DC output with higher efficiency, higher power, or more specific electrical characteristics.
Application
Rectifiers - Arrays are used in a wide range of applications. In the data center and telecommunications industries, to ensure uninterrupted power supply for servers and communication equipment, rectifier arrays are used to provide highly reliable DC power. In the field of renewable energy, especially in solar photovoltaic power generation systems, rectifier arrays are used to convert the direct current generated by photovoltaic panels into grid-compatible alternating current, or integrate the direct current generated by multiple photovoltaic panels to improve the output efficiency of the entire system. In addition, rectifier arrays also play an important role in electric vehicle charging stations, industrial motor drives, battery energy storage systems, and power electronics. With the development of power electronics technology, the application prospect of rectifier array will be broader.
1N4007 diode: key component in electronic circuits
The 1N4007 rectifier diode belongs to a series of high-power rectifier diodes made of silicon materials. Its main feature is that it can withstand high peak reverse voltage and average rectifier current. Specifically, the maximum peak reverse voltage (VRM) of 1N4007 is 1000V, the average rectifier current (IF(AV)) is 1A, and it operates in the temperature range of -65°C to +175°C. In addition, its forward voltage drop (VF) is about 1V at high current, with good thermal stability, and can work st
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Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
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