RFD12N06RLESM9A

ON Semiconductor RFD12N06RLESM9A

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  • RFD12N06RLESM9A
  • ON Semiconductor
  • MOSFET N-CH 60V 18A TO252AA
  • Transistors - FETs, MOSFETs - Single
  • RFD12N06RLESM9A Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 7828
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RFD12N06RLESM9A
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 60V 18A TO252AA
Package
Cut Tape (CT)
Series
UltraFET™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
49W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
485 pF @ 25 V
Vgs (Max)
±16V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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ON Semiconductor
ON Semiconductor
ON Semiconductor is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, ...
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