Rohm Semiconductor RJ1P12BBDTLL
- RJ1P12BBDTLL
- Rohm Semiconductor
- MOSFET N-CH 100V 120A LPTL
- Transistors - FETs, MOSFETs - Single
- RJ1P12BBDTLL Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant
- 2251
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RJ1P12BBDTLL |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Rohm Semiconductor |
Description MOSFET N-CH 100V 120A LPTL |
Package Tube |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package LPTL |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 178W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
Rds On (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4170 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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