Renesas Electronics America Inc RJK0222DNS-00#J5
- RJK0222DNS-00#J5
- Renesas Electronics America Inc
- POWER FIELD-EFFECT TRANSISTOR
- Transistors - FETs, MOSFETs - Arrays
- RJK0222DNS-00#J5 Datasheet
- 8-WDFN Exposed Pad
- Bulk
-
Lead free / RoHS Compliant
- 3305
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RJK0222DNS-00#J5 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Renesas Electronics America Inc |
Description POWER FIELD-EFFECT TRANSISTOR |
Package Bulk |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-WDFN Exposed Pad |
Supplier Device Package 8-DFN (5x6) |
Power - Max 8W, 10W |
FET Type 2 N-Channel (Half Bridge) |
FET Feature Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) 25V |
Current - Continuous Drain (Id) @ 25°C 14A, 16A |
Rds On (Max) @ Id, Vgs 9.2mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 10V |
Package_case 8-WDFN Exposed Pad |
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