Rectron USA RM12N650LD
- RM12N650LD
- Rectron USA
- MOSFET N-CH 650V 11.5A TO252-2
- Transistors - FETs, MOSFETs - Single
- RM12N650LD Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 3726
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RM12N650LD |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Rectron USA |
Description MOSFET N-CH 650V 11.5A TO252-2 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252-2 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 101W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) |
Rds On (Max) @ Id, Vgs 360mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 50 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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