RM18P100HDE

Rectron USA RM18P100HDE

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  • RM18P100HDE
  • Rectron USA
  • MOSFET P-CH 100V 18A TO263-2
  • Transistors - FETs, MOSFETs - Single
  • RM18P100HDE Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3648
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RM18P100HDE
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Rectron USA
Description
MOSFET P-CH 100V 18A TO263-2
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263-2
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
70W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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