Rectron USA RM4N650IP
- RM4N650IP
- Rectron USA
- MOSFET N-CHANNEL 650V 4A TO251
- Transistors - FETs, MOSFETs - Single
- RM4N650IP Datasheet
- TO-251-3 Stub Leads, IPak
- Bulk
-
Lead free / RoHS Compliant
- 2334
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RM4N650IP |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Rectron USA |
Description MOSFET N-CHANNEL 650V 4A TO251 |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-251-3 Stub Leads, IPak |
Supplier Device Package TO-251 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 46W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 50 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-251-3 Stub Leads, IPak |
RM4N650IP Guarantees
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