RM4N650IP

Rectron USA RM4N650IP

The picture is for reference only, please refer to the product specification

  • RM4N650IP
  • Rectron USA
  • MOSFET N-CHANNEL 650V 4A TO251
  • Transistors - FETs, MOSFETs - Single
  • RM4N650IP Datasheet
  • TO-251-3 Stub Leads, IPak
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2334
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RM4N650IP
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 4A TO251
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Supplier Device Package
TO-251
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
46W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 50 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-251-3 Stub Leads, IPak

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