Toshiba Semiconductor and Storage RN1106MFV(TL3,T)
- RN1106MFV(TL3,T)
- Toshiba Semiconductor and Storage
- TRANS PREBIAS NPN 50V 0.1A VESM
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- RN1106MFV(TL3,T) Datasheet
- SOT-723
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 9100
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RN1106MFV(TL3,T) |
Category Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS PREBIAS NPN 50V 0.1A VESM |
Package Cut Tape (CT) |
Series - |
Mounting Type Surface Mount |
Package / Case SOT-723 |
Supplier Device Package VESM |
Power - Max 150 mW |
Transistor Type NPN - Pre-Biased |
Current - Collector (Ic) (Max) 100 mA |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V |
Frequency - Transition - |
Resistor - Base (R1) 4.7 kOhms |
Resistor - Emitter Base (R2) 47 kOhms |
Package_case SOT-723 |
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