RN1131MFV(TL3,T)

Toshiba Semiconductor and Storage RN1131MFV(TL3,T)

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  • RN1131MFV(TL3,T)
  • Toshiba Semiconductor and Storage
  • TRANS PREBIAS NPN 50V 0.1A VESM
  • Transistors - Bipolar (BJT) - Single, Pre-Biased
  • RN1131MFV(TL3,T) Datasheet
  • SOT-723
  • Jinftry-Reel®
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4757
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RN1131MFV(TL3,T)
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Package
Jinftry-Reel®
Series
-
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Power - Max
150 mW
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Frequency - Transition
-
Resistor - Base (R1)
100 kOhms
Resistor - Emitter Base (R2)
-
Package_case
SOT-723

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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