Toshiba Semiconductor and Storage RN1412,LF
- RN1412,LF
- Toshiba Semiconductor and Storage
- TRANS PREBIAS NPN 50V 0.1A SMINI
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- RN1412,LF Datasheet
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 8611
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RN1412,LF |
Category Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS PREBIAS NPN 50V 0.1A SMINI |
Package Cut Tape (CT) |
Series - |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package S-Mini |
Power - Max 200 mW |
Transistor Type NPN - Pre-Biased |
Current - Collector (Ic) (Max) 100 mA |
Voltage - Collector Emitter Breakdown (Max) 50 V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V |
Frequency - Transition 250 MHz |
Resistor - Base (R1) 22 kOhms |
Resistor - Emitter Base (R2) - |
Package_case TO-236-3, SC-59, SOT-23-3 |
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