RN1709JE(TE85L,F)

Toshiba Semiconductor and Storage RN1709JE(TE85L,F)

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  • RN1709JE(TE85L,F)
  • Toshiba Semiconductor and Storage
  • NPN X 2 BRT, Q1BSR=47KΩ, Q1BER=2
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • RN1709JE(TE85L,F) Datasheet
  • SOT-553
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 29665
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RN1709JE(TE85L,F)
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer
Toshiba Semiconductor and Storage
Description
NPN X 2 BRT, Q1BSR=47KΩ, Q1BER=2
Package
Cut Tape (CT)
Series
-
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
ESV
Power - Max
100mW
Transistor Type
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Frequency - Transition
250MHz
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
22kOhms
Package_case
SOT-553

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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