Toshiba Semiconductor and Storage RN1911FE,LF(CT
- RN1911FE,LF(CT
- Toshiba Semiconductor and Storage
- NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=I
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RN1911FE,LF(CT Datasheet
- SOT-563, SOT-666
- Bulk
-
Lead free / RoHS Compliant
- 12733
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RN1911FE,LF(CT |
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=I |
Package Bulk |
Series - |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package ES6 |
Power - Max 100mW |
Transistor Type 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V |
Frequency - Transition 250MHz |
Resistor - Base (R1) 10kOhms |
Resistor - Emitter Base (R2) - |
Package_case SOT-563, SOT-666 |
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