RN2910FE,LF(CT

Toshiba Semiconductor and Storage RN2910FE,LF(CT

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  • RN2910FE,LF(CT
  • Toshiba Semiconductor and Storage
  • TRANS 2PNP PREBIAS 0.1W ES6
  • Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • RN2910FE,LF(CT Datasheet
  • SOT-563, SOT-666
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1930
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RN2910FE,LF(CT
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2PNP PREBIAS 0.1W ES6
Package
Bulk
Series
-
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Power - Max
100mW
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Frequency - Transition
200MHz
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
-
Package_case
SOT-563, SOT-666

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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