Rohm Semiconductor RQ3G110ATTB
- RQ3G110ATTB
- Rohm Semiconductor
- PCH -40V -35A, HSMT8, POWER MOSF
- Transistors - FETs, MOSFETs - Single
- RQ3G110ATTB Datasheet
- 8-PowerVDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 2987
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RQ3G110ATTB |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Rohm Semiconductor |
Description PCH -40V -35A, HSMT8, POWER MOSF |
Package Cut Tape (CT) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package 8-HSMT (3.2x3) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2W (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 35A (Tc) |
Rds On (Max) @ Id, Vgs 12.4mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2750 pF @ 20 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerVDFN |
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