Rohm Semiconductor RV4E031RPHZGTCR1
- RV4E031RPHZGTCR1
- Rohm Semiconductor
- MOSFET P-CH 30V 3.1A DFN1616-6W
- Transistors - FETs, MOSFETs - Single
- RV4E031RPHZGTCR1 Datasheet
- 6-PowerWFDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 4245
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RV4E031RPHZGTCR1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Rohm Semiconductor |
Description MOSFET P-CH 30V 3.1A DFN1616-6W |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount, Wettable Flank |
Package / Case 6-PowerWFDFN |
Supplier Device Package DFN1616-6W |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.5W (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) |
Rds On (Max) @ Id, Vgs 105mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case 6-PowerWFDFN |
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