SCT20N120H

STMicroelectronics SCT20N120H

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  • SCT20N120H
  • STMicroelectronics
  • SICFET N-CH 1200V 20A H2PAK-2
  • Transistors - FETs, MOSFETs - Single
  • SCT20N120H Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3290
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SCT20N120H
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 20A H2PAK-2
Package
Tube
Series
-
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
H2Pak-2
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
175W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 400 V
Vgs (Max)
+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)
20V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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