SCTH35N65G2V-7AG

STMicroelectronics SCTH35N65G2V-7AG

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  • SCTH35N65G2V-7AG
  • STMicroelectronics
  • SICFET N-CH 650V 45A H2PAK-7
  • Transistors - FETs, MOSFETs - Single
  • SCTH35N65G2V-7AG Datasheet
  • TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 945
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SCTH35N65G2V-7AG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
STMicroelectronics
Description
SICFET N-CH 650V 45A H2PAK-7
Package
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package
H2PAK-7
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
208W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
Vgs (Max)
+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Package_case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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