SCTL90N65G2V

STMicroelectronics SCTL90N65G2V

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  • SCTL90N65G2V
  • STMicroelectronics
  • SILICON CARBIDE POWER MOSFET 650
  • Transistors - FETs, MOSFETs - Single
  • SCTL90N65G2V Datasheet
  • 8-PowerVDFN
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4759
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SCTL90N65G2V
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
STMicroelectronics
Description
SILICON CARBIDE POWER MOSFET 650
Package
Tube
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PowerFlat™ (8x8) HV
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
935W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
Vgs (Max)
+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package_case
8-PowerVDFN

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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