STMicroelectronics SCTL90N65G2V
- SCTL90N65G2V
- STMicroelectronics
- SILICON CARBIDE POWER MOSFET 650
- Transistors - FETs, MOSFETs - Single
- SCTL90N65G2V Datasheet
- 8-PowerVDFN
- Tube
- Lead free / RoHS Compliant
- 4759
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SCTL90N65G2V |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer STMicroelectronics |
Description SILICON CARBIDE POWER MOSFET 650 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package PowerFlat™ (8x8) HV |
Technology SiC (Silicon Carbide Junction Transistor) |
Power Dissipation (Max) 935W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 40A (Tc) |
Rds On (Max) @ Id, Vgs 24mOhm @ 40A, 18V |
Vgs(th) (Max) @ Id 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 400 V |
Vgs (Max) +22V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 18V |
Package_case 8-PowerVDFN |
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