Vishay Siliconix SI1070X-T1-GE3
- SI1070X-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 30V 1.2A SC89-6
- Transistors - FETs, MOSFETs - Single
- SI1070X-T1-GE3 Datasheet
- SOT-563, SOT-666
- Jinftry-Reel®
-
Lead free / RoHS Compliant
- 1785
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI1070X-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 1.2A SC89-6 |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package SC-89 (SOT-563F) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 236mW (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) |
Rds On (Max) @ Id, Vgs 99mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id 1.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 15 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
Package_case SOT-563, SOT-666 |
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