Vishay Siliconix SI2303CDS-T1-BE3
- SI2303CDS-T1-BE3
- Vishay Siliconix
- MOSFET P-CH 30V 1.9A/2.7A SOT23
- Transistors - FETs, MOSFETs - Single
- SI2303CDS-T1-BE3 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Bulk
- Lead free / RoHS Compliant
- 16272
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI2303CDS-T1-BE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 30V 1.9A/2.7A SOT23 |
Package Bulk |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta), 2.3W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta), 2.7A (Tc) |
Rds On (Max) @ Id, Vgs 190mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix
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