Vishay Siliconix SI2387DS-T1-GE3
- SI2387DS-T1-GE3
- Vishay Siliconix
- P-CHANNEL -80V SOT-23, 164 M @ 1
- Transistors - FETs, MOSFETs - Single
- SI2387DS-T1-GE3 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3008
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI2387DS-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description P-CHANNEL -80V SOT-23, 164 M @ 1 |
Package Tape & Reel (TR) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.3W (Ta), 2.5W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 80 V |
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta), 3A (Tc) |
Rds On (Max) @ Id, Vgs 164mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 10.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 395 pF @ 40 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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