Vishay Siliconix SI3460DV-T1-E3
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- SI3460DV-T1-E3
- Vishay Siliconix
- MOSFET N-CH 20V 5.1A 6TSOP
- Transistors - FETs, MOSFETs - Single
- SI3460DV-T1-E3 Datasheet
- SOT-23-6 Thin, TSOT-23-6
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 4949
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number SI3460DV-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 20V 5.1A 6TSOP |
| Package Jinftry-Reel® |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package 6-TSOP |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.1W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id 450mV @ 1mA (Min) |
| Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds - |
| Vgs (Max) ±8V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
| Package_case SOT-23-6 Thin, TSOT-23-6 |
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