Vishay Siliconix SI3586DV-T1-E3
- SI3586DV-T1-E3
- Vishay Siliconix
- MOSFET N/P-CH 20V 2.9A 6TSOP
- Transistors - FETs, MOSFETs - Arrays
- SI3586DV-T1-E3 Datasheet
- SOT-23-6 Thin, TSOT-23-6
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 7773
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI3586DV-T1-E3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET N/P-CH 20V 2.9A 6TSOP |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package 6-TSOP |
Power - Max 830mW |
FET Type N and P-Channel |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 20V |
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.1A |
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 4.5V |
Vgs(th) (Max) @ Id 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds - |
Package_case SOT-23-6 Thin, TSOT-23-6 |
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