Vishay Siliconix SI4190DY-T1-GE3
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- SI4190DY-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 20A 8-SOIC
- Transistors - FETs, MOSFETs - Single
- SI4190DY-T1-GE3 Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 4614
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number SI4190DY-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 100V 20A 8-SOIC |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature - |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SOIC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) - |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 20A (Tc) |
| Rds On (Max) @ Id, Vgs 8.8mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 50 V |
| Vgs (Max) - |
| Drive Voltage (Max Rds On, Min Rds On) - |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
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