Vishay Siliconix SI4435FDY-T1-GE3
- SI4435FDY-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 30V 12.6A 8SOIC
- Transistors - FETs, MOSFETs - Single
- SI4435FDY-T1-GE3 Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Bulk
-
Lead free / RoHS Compliant
- 1113
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI4435FDY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 30V 12.6A 8SOIC |
Package Bulk |
Series TrenchFET® Gen III |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 4.8W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 12.6A (Tc) |
Rds On (Max) @ Id, Vgs 19mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
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