SI4712DY-T1-GE3

Vishay Siliconix SI4712DY-T1-GE3

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  • SI4712DY-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 30V 14.6A 8SO
  • Transistors - FETs, MOSFETs - Single
  • SI4712DY-T1-GE3 Datasheet
  • 8-SOIC (0.154\", 3.90mm Width)
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1091
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI4712DY-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 14.6A 8SO
Package
Bulk
Series
SkyFET®, TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SOIC
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 5W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14.6A (Tc)
Rds On (Max) @ Id, Vgs
13mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1084 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-SOIC (0.154\", 3.90mm Width)

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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