Vishay Siliconix SI4712DY-T1-GE3
- SI4712DY-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 30V 14.6A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4712DY-T1-GE3 Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Bulk
-
Lead free / RoHS Compliant
- 1091
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI4712DY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 14.6A 8SO |
Package Bulk |
Series SkyFET®, TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 5W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 14.6A (Tc) |
Rds On (Max) @ Id, Vgs 13mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1084 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
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