Vishay Siliconix SI5475DDC-T1-GE3
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- SI5475DDC-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 12V 6A 1206-8
- Transistors - FETs, MOSFETs - Single
- SI5475DDC-T1-GE3 Datasheet
- 8-SMD, Flat Lead
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 18545
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SI5475DDC-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 12V 6A 1206-8 |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SMD, Flat Lead |
| Supplier Device Package 1206-8 ChipFET™ |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 12 V |
| Current - Continuous Drain (Id) @ 25°C 6A (Tc) |
| Rds On (Max) @ Id, Vgs 32mOhm @ 5.4A, 4.5V |
| Vgs(th) (Max) @ Id 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 50 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 6 V |
| Vgs (Max) ±8V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
| Package_case 8-SMD, Flat Lead |
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