Vishay Siliconix SI5509DC-T1-E3
- SI5509DC-T1-E3
- Vishay Siliconix
- MOSFET N/P-CH 20V 6.1A 1206-8
- Transistors - FETs, MOSFETs - Arrays
- SI5509DC-T1-E3 Datasheet
- 8-SMD, Flat Lead
- Jinftry-Reel®
-
Lead free / RoHS Compliant
- 2576
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI5509DC-T1-E3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET N/P-CH 20V 6.1A 1206-8 |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SMD, Flat Lead |
Supplier Device Package 1206-8 ChipFET™ |
Power - Max 4.5W |
FET Type N and P-Channel |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 20V |
Current - Continuous Drain (Id) @ 25°C 6.1A, 4.8A |
Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V |
Package_case 8-SMD, Flat Lead |
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