SI8806DB-T2-E1

Vishay Siliconix SI8806DB-T2-E1

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  • SI8806DB-T2-E1
  • Vishay Siliconix
  • MOSFET N-CH 12V 4MICROFOOT
  • Transistors - FETs, MOSFETs - Single
  • SI8806DB-T2-E1 Datasheet
  • 4-XFBGA
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 29672
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI8806DB-T2-E1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 12V 4MICROFOOT
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-XFBGA
Supplier Device Package
4-Microfoot
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
500mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Ta)
Rds On (Max) @ Id, Vgs
43mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package_case
4-XFBGA

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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